SiGe skills widen to GeSn

Friday 15th September 2017
AFSOR, NASA and Arkansas Unviversity create GeSn on Si substrates

Supported by AFOSR (Air Force Office of Scientific Research) NASA (National Aeronautics and Space Administration) has demonstrated in its EPSCoR (Established Program to Stimulate Competitive Research), and NSF (National Science Foundation), researchers from a multi-institutional team have demonstrated that infrared lasers made from inexpensive GeSn (germanium tin alloy grown on Si (silicon) substrates. This gives the laser an operation wavelength coverage is from 2 to 3 micron, with the maximum operating temperature reaching 180 Kelvin.1,2

Although great success has been made on Si-based waveguides, modulators, and photodetectors, a low-cost integrated light source on silicon with high efficiency and reliability remains missing and is seen as the most challenging task to form a complete set of Si photonic components.

The research team demonstrated the first set of optically pumped GeSn edge-emitting lasers that covers an unprecedented broad wavelength range from 2 to 3 micron and higher efficiency than all previous reports. This work is an essential step towards obtaining high performance and cost-effective Si-based monolithic integrated mid-infrared laser sources.

The technology will improve not only lasers, but also detectors in a wide range of applications such as lasers for medical use, infrared detections, and in optical communications. The development of this technology will undoubtedly lead to opportunities for commercialization of the technical innovations to significantly contribute Arkansas economic development.

The research team includes Drs. Mansour Mortazavi, Wei Du, and Seyed Amir Ghetmiri from the Department of Chemistry and Physics at the University of Arkansas at Pine Bluff, in collaboration with the University of Arkansas Fayetteville, researchers at ASM, Dartmouth College, University of Massachusetts Boston, and Arkto.

Below: Courtesy The ECS Journal of Solid State Science and Technology

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