Advanced Devices: CMOS scaling; high performance, low power, and low voltage devices; SOI, SGOI, and SiON devices; SiGe, Ge, and strained devices; nano devices and related device physics; double and multi gate transistors; high mobility and ballistic devices.
Processing & Integration: Advances in integration for ULSI; SOI, SGOI, and SiON processing; 3D integration; new materials for CMOS; ICs patterning techniques; gate dielectrics; high k; gate stack and junction technology; silicidation; interconnects; low k dielectrics; damascene processing; cleaning and surface preparation.
Telecommunication & Power Devices: RF CMOS; passives; antennas; filters; resonators;
inductors; RF MEMS/switches; SAW, BAW, and FBAR; oscillators, HBT; HEMT; bipolar devices;
BiCMOS; high voltage and high power devices; SiC; high temperature operation; CMOS compatible power devices.
Modelling and Simulation: Compact, numerical, and physical modelling; device simulation; behavior models; quantum mechanical and non-stationary transport phenomena; ballistic transport; scattering models; process dispersions, parameter fluctuations, variability; TCAD; mixed electrical-thermal modelling and simulation.
Characterisation and Reliability: Characterisation techniques; parameter extraction; advanced test structures and methods; noise; gate dielectric, device, and interconnect reliability; CHE
effects; NBTI; SILC; memory retention; processinduceddamages, ESD, EMI; defect monitoring and control; metrology.
Contact: http://www.essderc2008.org/